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| Semiconductor IRF244, IRF245, IRF246, IRF247 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17423. January 1998 Features * 14A and 13A, 275V and 250V * rDS(ON) = 0.28 and 0.34 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * 275V, 250V DC Rated - 120V AC Line System Operation * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D Ordering Information PART NUMBER IRF244 IRF245 IRF246 IRF247 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF244 IRF245 IRF246 IRF247 G S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1997 File Number 2209.2 5-1 IRF244, IRF245, IRF246, IRF247 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF244 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . TL Package Body for 10s, see TB334 . . . . . . . . . . . . . . . . . .Tpkg 250 250 14 8.8 56 20 125 1.0 550 -55 to 150 300 260 IRF245 250 250 13 8.0 52 20 125 1.0 550 -55 to 150 300 260 IRF246 275 275 14 8.8 56 20 125 1.0 550 -55 to 150 300 260 IRF247 275 275 13 8.0 52 20 125 1.0 550 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS VGS = 0V, ID = 250A (Figure 10) MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF244, IRF245 IRF246, IRF247 Gate to Threshold Voltage Zero-Gate Voltage Drain Current 250 275 - 4.0 25 250 V V V A A VGS(TH) IDSS VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC 2.0 - On-State Drain Current (Note 2) IRF244, IRF246 IRF245, IRF247 Gate to Source Leakage Current Drain to Source On-State Resistance (Note 2) IRF244, IRF246 IRF245, IRF247 Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 14 13 100 A A nA IGSS rDS(ON) VGS = 20V VGS = 10V, ID = 8A, (Figures 8, 9) - gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd VGS = 10V, ID = 14A, VDS = 0.8 x Rated BVDSS, Ig(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature VDS 50V, ID = 8A, (Figure 12) VDD = 125V, ID 14A, RG = 9.1, RL = 8.9 (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 6.7 - 0.20 0.24 10 16 67 53 49 39 0.28 0.34 24 100 80 74 59 S ns ns ns ns nC - 6.6 20 - nC nC 5-2 IRF244, IRF245, IRF246, IRF247 Electrical Specifications PARAMETER Input Capacitance Output Capacitance Reverse-Transfer Capacitance Internal Drain Inductance TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL CISS COSS CRSS LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured From The Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD TEST CONDITIONS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) MIN - TYP 1300 320 69 5.0 MAX - UNITS pF pF pF nH Internal Source Inductance LS G LS S 12.5 - nH Junction to Case Junction to Ambient RJC RJA Free Air Operation - - 1.0 30 oC/W oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX 14 56 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge Forward Turn-On Time NOTES: VSD trr QRR tON TJ = 25oC, ISD = 14A, VGS = 0V (Figure 13) TJ = 25oC, ISD = 14A, dISD/dt = 100A/s TJ = 25oC, ISD = 14A, dISD/dt = 100A/s Intrinsic Turn-On Time is Negligible, Turn-On Speed is Substantially Controlled by LS + LD 150 1.6 - 300 3.4 - 1.8 640 7.2 - V ns C - 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 4.5mH, RG = 25, peak IAS = 14A. See Figures 15, 16. 5-3 IRF244, IRF245, IRF246, IRF247 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) Unless Otherwise Specified 15 12 IRF244, IRF246 IRF245, IRF247 0.8 0.6 0.4 0.2 0 9 6 3 0 0 50 100 150 TC, CASE TEMPERATURE (oC) 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 ZJC, TRANSIENT THERMAL IMPEDANCE (oC/W) 1 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE PDM 0.1 t1 t2 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 0.001 10-5 10-4 10-3 10-2 0.1 1 10 t1, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 1000 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) 100 IRF244, 246 IRF245, 247 IRF244, 246 10 IRF245, 247 1ms 1 TC = 25oC TJ = MAX RATED SINGLE PULSE 0.1 1 100 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 1000 IRF244, IRF245 10ms DC IRF246, IRF247 10s 100s ID, DRAIN CURRENT (A) 25 VGS =10V 20 80s PULSE TEST VGS =6.0V 15 VGS =5.5V 10 VGS = 5.0V 5 VGS =4.5V VGS =4.0V 0 0 25 50 75 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 125 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 5-4 IRF244, IRF245, IRF246, IRF247 Typical Performance Curves 25 80s PULSE TEST 20 10V Unless Otherwise Specified (Continued) 100 VDS 50V 80s PULSE TEST ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 6.0V 10 15 5.5V 10 VGS = 5.0V 5 4.5V 4.0V 0 0 2 4 6 8 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 TJ = 150oC 1 TJ = 25oC 0.1 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS 2.5 80s PULSE TEST 2.0 ON RESISTANCE () VGS = 10V 1.5 NORMALIZED DRAIN TO SOURCE ON RESISTANCE VOLTAGE rDS(ON), DRAIN TO SOURCE 3.0 ID = 14A VGS = 10V 2.4 1.8 1.0 1.2 0.5 VGS = 20V 0.6 0 0 15 30 45 ID, DRAIN CURRENT (A) 60 75 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 3000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 1.15 PF, CAPACITANCE (C) 2400 1.05 1800 CISS 0.95 1200 COSS 0.85 600 CRSS 0.75 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 TJ, JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 5-5 IRF244, IRF245, IRF246, IRF247 Typical Performance Curves 15 gfs, TRANSCONDUCTANCE (S) VDS 50V 80s PULSE TEST TJ = 25oC Unless Otherwise Specified (Continued) 12 ISD, SOURCE TO DRAIN CURRENT (A) 102 10 9 TJ = 150oC 6 TJ = 150oC 1 TJ = 25oC 3 0 0.1 0 5 10 15 ID, DRAIN CURRENT (A) 20 25 0 0.4 0.8 1.2 1.6 VSD, SOURCE TO DRAIN VOLTAGE (V) 2.0 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 VGS, GATE TO SOURCE VOLTAGE (V) IC = 14A 16 VDS = 50V 12 VDS = 125V VDS = 200V 8 4 0 0 12 24 36 48 60 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5-6 IRF244, IRF245, IRF246, IRF247 Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01 0 tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0.2F 50k 0.3F G DUT 0 Ig(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS 5-7 |
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